Methods of forming materials comprising tungsten and nitrogen, and methods of forming capacitors

ABSTRACT

In one aspect, the invention includes a method of forming a material comprising tungsten and nitrogen, comprising: a) providing a substrate; b) depositing a layer comprising tungsten and nitrogen over the substrate; and c) in a separate step from the depositing, exposing the layer comprising tungsten and nitrogen to a nitrogen-containing plasma. In another aspect, the invention includes a method of forming a capacitor, comprising: a) forming a first electrical node; b) forming a dielectric layer over the first electrical node; c) forming a second electrical node; and d) providing a layer comprising tungsten and nitrogen between the dielectric layer and one of the electrical nodes, the providing comprising; i) depositing a layer comprising tungsten and nitrogen; and ii) in a separate step from the depositing, exposing the layer comprising tungsten and nitrogen to a nitrogen-containing plasma.

TECHNICAL FIELD

[0001] The invention pertains to methods of forming materials comprisingtungsten and nitrogen, and in an exemplary application pertains tomethods of forming capacitors.

BACKGROUND OF THE INVENTION

[0002] Tungsten nitride has properties which render itparticularly-suitable for utilization in integrated circuitry. Forinstance, tungsten nitride is found to exhibit better or equivalentelectrical properties when compared to such commonly utilizedcompositions as, for example, TiN. Further, tungsten nitride retains itsgood electrical properties after being subjected to relatively hightemperature processing, such as a polysilicon anneal orborophosphosilicate glass (BPSG) reflow.

[0003] Tungsten nitride materials can be formed by, for example,chemical vapor deposition processes, such as, for example, plasmaenhanced chemical vapor deposition (PECVD). The tungsten nitridematerials formed by such methods can have good step coverage over anunderlying substrate and be continuous, particularly if formed at lowerworking ends of temperature and plasma power ranges. However,utilization of such tungsten nitride materials has been limited due todifficulties in working with the materials. Specifically, tungstennitride can peel, and/or bubble, and/or crack when exposed to hightemperature processing (such as, for example, the greater than 800° C.processing associated with anneal steps). The peeling, cracking andbubbling lead to a non-continuous film. It would be desirable to developmethods of forming materials comprising tungsten nitride which overcomeproblems associated with tungsten nitride exposure to high temperatureprocessing conditions.

SUMMARY OF THE INVENTION

[0004] In one aspect, the invention includes a method of forming amaterial comprising tungsten and nitrogen. A layer comprising tungstenand nitrogen is deposited over a substrate. Subsequently, and in aseparate step from the depositing, the layer comprising tungsten andnitrogen is exposed to a nitrogen-containing plasma.

[0005] In another aspect, the invention includes a method of forming acapacitor. A first electrical node is formed and a dielectric layer isformed over the first electrical node. A second electrical node isformed and separated from the first electrical node by the dielectriclayer. A layer comprising tungsten and nitrogen is provided between thedielectric layer and one of the electrical nodes. The providing thelayer comprising tungsten and nitrogen includes: a) depositing a layercomprising tungsten and nitrogen; and b) in a separate step from thedepositing, exposing the layer comprising tungsten and nitrogen to anitrogen-containing plasma.

BRIEF DESCRIPTION OF THE DRAWINGS

[0006] Preferred embodiments of the invention are described below withreference to the following accompanying drawings.

[0007]FIG. 1 is a fragmentary, diagrammatic, cross-sectional view of asemiconductor wafer fragment at a preliminary step of a method of thepresent invention.

[0008]FIG. 2 is a view of the FIG. 1 wafer fragment shown at aprocessing step subsequent to that of FIG. 1.

[0009]FIG. 3 is a view of the FIG. 1 wafer fragment shown at aprocessing step subsequent, to that of FIG. 2.

[0010]FIG. 4 is a view of the FIG. 1 wafer fragment shown at aprocessing step subsequent to that of FIG. 4.

[0011]FIG. 5 is a fragmentary, diagrammatic, cross-sectional view of asemiconductor wafer fragment at a preliminary step of a secondembodiment method of the present invention.

[0012]FIG. 6 is a view of the FIG. 5 wafer fragment shown at aprocessing step subsequent to that of FIG. 5.

[0013]FIG. 7 is a view of the FIG. 5 wafer fragment shown at a 4processing step subsequent to that of FIG. 6.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0014] This disclosure of the invention is submitted in furtherance ofthe constitutional purposes of the U.S. Patent Laws “to promote theprogress of science and useful arts” (Article 1, Section 8).

[0015] The invention encompasses methods of forming materials comprisingtungsten and nitrogen. An exemplary method of the present invention isdescribed with reference to a semiconductor wafer fragment 10 in FIGS. 1and 2. Referring to FIG. 1, wafer fragment 10 comprises a substrate 12and a layer 14 formed over substrate 12. Substrate 12 includes a step16. Substrate 12 can comprise, for example, a conductive material, or aninsulative material. Exemplary conductive materials include, forexample, conductively doped polysilicon and metals, such as, forexample, copper. Conductive materials of substrate 12 can beincorporated into, for example, interconnect lines. Exemplary insulativematerials include, for example, silicon dioxide, tantalum pentoxide(Ta₂O₅) and barium strontium titanate (BST). The insulative material canhave a dielectric constant or “K” value which is greater than or equalto about 10. For instance, Ta₂O₅ comprises a “K” value of from about 10to about 25, and BST comprises a “K” value of from about 80 to about1,000 or greater.

[0016] Layer 14 comprises tungsten and nitrogen, and can, for example,consist essentially of tungsten nitride. Such tungsten nitride can havethe chemical formula WN_(x), wherein “x” is from 0.05 to 0.5. In oneaspect, layer 14 is a tungsten nitride layer. Tungsten nitride layer 14can be formed by, for example, chemical vapor deposition utilizing WF₆and N₂ and H₂ as precursors, with either He or Ar as a carrier gas. Thedeposition can be plasma enhanced, with a plasma power of from about 50watts to about 700 watts. A temperature of a substrate upon whichdeposition occurs can be from about 170° C. to about 550° C., and apressure within the deposition chamber can be from about 500 mTorr toabout 8 Torr. The described conditions are for deposition of tungstennitride over a single semiconductor material wafer.

[0017] Tungsten nitride layer 14 is preferably formed to a thickness offrom about 30 Å to about 2000 Å, and more preferably from about 50 Å toabout 500 Å. An exemplary thickness of layer 14 is from about 150 Å toabout 500 Å. The shown layer 14 has a number of defects. Specifically,voids (or cracks) 20 occur throughout layer 14. An additional defect isa bubble 22 formed within layer 14 at an interface of layer 14 andsubstrate 12. The above-described defects can occur either duringdeposition of layer 14, or during high temperature processing subsequentto the deposition.

[0018] Referring to FIG. 2, layer 14′ is exposed to anitrogen-containing plasma in accordance with a method of the presentinvention. Such exposure removes at least some of defects 20 and 22.After the exposure, layer 14 forms a stable film over substrate 12, withthe term “stable” indicating that layer 14 is resistant to formation ofcracks, voids or bubbles during subsequent processing.

[0019] The plasma to which layer 14 is exposed preferably comprises anitrogen-containing compound that does not contain oxygen. Suitablecompounds are, for example, N₂ and NH₃.

[0020] Exemplary conditions for treating layer 14 in accordance with thepresent invention include subjecting layer 14 to a plasma within areaction chamber at a temperature of from about 170° C. to about 550°C., and a pressure of from about 500 mTorr to about 8 Torr. N₂ gas isflowed into the chamber at a rate of from about 50 standard cubiccentimeters per minute (sccm) to about 800 sccm, and a plasma ismaintained within the chamber at a plasma power of from about 100 wattsto about 800 watts. One or more of H₂ and Ar can be flowed into thechamber in addition to the N₂. If H₂ is flowed, it is preferably flowedat a rate of from about 50 sccm to about 800 sccm, and if Ar is flowed,it is preferably flowed at a rate of from about 200 sccm to about 2,000sccm. An exposure time of a substrate to the plasma of from about 10seconds to about 80 seconds is found to be generally sufficient to curedefects in a tungsten nitride layer having a thickness of less than orequal to about 2000 Å, and to convert such layer to a stable film.

[0021] The treatment discussed above with reference to FIG. 2 isconducted in a discrete step separate from the step of forming layer 14that is discussed with reference to FIG. 1. The separate step of FIG. 2can, however, be conducted in the same chamber as the layer-forming stepof FIG. 1 by ceasing the forming step while maintaining a plasmautilized for the forming step. For instance, in embodiments wherein WF₆and either N₂ or NH₃ are utilized as precursors in the layer-formingstep of FIG. 1, the layer-forming step can be stopped by ceasing a flowof WF₆ into the reaction chamber. If the nitrogen precursor flow andplasma are maintained within the chamber, the treatment described withreference to FIG. 2 can proceed.

[0022] Another aspect of the invention is described with reference toFIGS. 3 and 4. In this aspect, the layer 14 formed above by theprocessing of FIGS. 1 and 2 is utilized as a substrate for formation ofa second layer 30 comprising tungsten and nitrogen. Second layer 30 canbe formed by identical processing as that described above with referenceto FIG. 1. Layer 30 can then be treated by processing analogous to thatdescribed above with reference to FIG. 2 to eliminate defects and formthe construction illustrated in FIG. 4.

[0023] Layers 14 and 30 of FIG. 4 together comprise a mass 32 oftungsten and nitrogen. The tungsten and nitrogen of mass 32 can, forexample, be in the form of tungsten nitride.

[0024] It is noted that although the above-described embodimentsillustrate a tungsten nitride material being treated with a plasma afterformation of defects in the material, the invention also encompassesmethods wherein a tungsten nitride material is treated with plasmabefore defects occur. For instance, in one aspect the inventionencompasses treating a tungsten nitride material that is substantiallyfree of defects with a plasma comprising a nitrogen-containing compound(preferably a nitrogen-containing compound that lacks oxygen). Suchtreatment can densify the tungsten nitride material to render it lesssusceptible to prior art problems associated with high temperatureprocessing of tungsten nitride materials.

[0025] Another embodiment of the invention is described with referenceto a semiconductor wafer fragment 50 in FIGS. 5-7. Referring to FIG. 5,wafer fragment 50 comprises a substrate 52 and an insulative layer 54formed over substrate 52. Insulative layer 54 can comprise, for example,BPSG. Substrate 52 can comprise, for example, monocrystalline siliconlightly doped with a p-type background dopant. To aid in interpretationof the claims that follow, the term “semiconductive substrate” isdefined to mean any construction comprising semiconductive material,including, but not limited to, bulk semiconductive material such as asemiconductive wafer (either alone or in assemblies comprising othermaterials thereon), and semiconductive material layers (either alone orin assemblies comprising other materials). The term “substrate” refersto any a supporting structure, including, but not limited to, thesemiconductive substrates described above.

[0026] An electrical node 56 is provided within substrate 52. Node 56can comprise, for example, a conductively doped diffusion region. Such Bdiffusion region can be formed by implanting a conductivity-enhancingimpurity into substrate 52.

[0027] An opening 58 extends through insulative material layer 54 and tonode 56. Opening 58 can be formed by conventional methods, such as, forexample, an etch utilizing CF₄/CHF₃ and a plasma.

[0028] An electrically conductive material 60 is formed within opening58, and a dielectric material 62 is formed over conductive material 60.Conductive material 60 and dielectric material 62 can be formed byconventional methods, such as, for example, chemical vapor depositionand photolithographic processing. Conductive material 60 can comprise,for example, a metal-containing layer, such as, titanium nitride ortitanium. Alternatively, conductive material 60 can compriseconductively doped polysilicon. In yet other alternative embodiments,conductive material 60 can comprise tungsten nitride formed inaccordance with the methods of the present invention described above.Dielectric material 62 can comprise, for example, a dielectric materialhaving a “K” value greater than or equal to 10.

[0029] A layer 64 comprising tungsten and nitrogen is formed overdielectric material 62. Layer 64 can be formed by, for example, theprocessing described above with reference to FIG. 1, and comprises anumber of defects. Generally, it is found to be particularly difficultto form tungsten nitride over dielectric materials having “K” values ofgreater than 10 utilizing prior art methods.

[0030] Referring to FIG. 6, layer 64 is exposed to a nitrogen-containingplasma under conditions such as those described above with reference toFIG. 2. The exposure to the plasma removes the defects from layer 64 andconverts layer 64 to a conformal and stable layer over dielectricmaterial 62. Layers 60, 62 and 64 now together comprise a capacitorconstruction 70, with layers 60 and 64 comprising electrodes of suchcapacitor construction.

[0031] Capacitor construction 70 can be incorporated as is intointegrated circuitry. Alternatively, subsequent processing can beconducted to add a second conductive layer over layer 64 to increase athickness of the top electrode of capacitor 70. FIG. 7 illustrates waferfragment 50 after such subsequent processing, and specificallyillustrates an additional conductive layer 72 formed over layer 64.Layer 72 can comprise, for example, an additional tungsten nitride layerformed in accordance with the processing described above with referenceto FIGS. 3 and 4. Alternatively, layer 72 can comprise a conductivematerial other than tungsten nitride, such as, for example, conductivelydoped polysilicon, or a metal-containing layer. In alternative methodsof describing capacitor structure 70 of FIG. 7, layer 64 can beconsidered as part of an upper electrode of the capacitor structure, oras being between dielectric layer 62 and an upper electrode consistingof layer 72.

[0032] In the shown embodiment, capacitor construction 70 is acontainer-type capacitor. The invention encompasses other embodiments(not shown) wherein the capacitor has a shape other than acontainer-type structure.

[0033] In the shown embodiment, tungsten nitride layer 64 is formedbetween dielectric layer 62 and an upper conductive electrode 72.However, it is to be understood that the invention encompasses otherembodiments (not shown) wherein layer 64 is formed between dielectriclayer 62 and lower electrode 60, either in addition to, or alternativelyto forming layer 64 between dielectric layer 62 and upper electrode 72.

[0034] It is noted that an advantage of providing tungsten nitride layer64 between dielectric layer 62 and a capacitor electrode is thattungsten nitride layer 64 can function as a barrier layer to alleviateor prevent diffusion of materials between dielectric layer 62 andconductive layer 72.

[0035] In compliance with the statute, the invention has been describedin language more or less specific as to structural and methodicalfeatures. It is to be understood, however, that the invention is notlimited to the specific features shown and described, since the meansherein disclosed comprise preferred forms of putting the invention intoeffect. The invention is, therefore, claimed in any of its forms ormodifications within the proper scope of the appended claimsappropriately interpreted in accordance with the doctrine ofequivalents.

1. A method of forming a material comprising tungsten and nitrogen,comprising: providing a substrate; depositing a layer comprisingtungsten and nitrogen over the substrate; and in a separate step fromthe depositing, exposing the layer comprising tungsten and nitrogen to anitrogen-containing plasma.
 2. The method of claim 1 wherein thesubstrate comprises a dielectric material having a “K” greater than orequal to
 10. 3. The method of claim 2 wherein the dielectric materialcomprises at least one of Ta₂O₅ and BST.
 4. The method of claim 1wherein the substrate comprises silicon.
 5. The method of claim 1wherein the substrate comprises silicon dioxide.
 6. The method of claim1 wherein the substrate comprises polysilicon.
 7. The method of claim 1wherein the substrate comprises a metal.
 8. The method of claim 1wherein the substrate comprises copper.
 9. The method of claim 1 whereinthe depositing comprises plasma-enhanced CVD utilizing WF₆ and anitrogen precursor.
 10. The method of claim 9 wherein the nitrogenprecursor comprises N₂.
 11. The method of claim 1 wherein the depositingcomprises plasma-enhanced CVD utilizing WF₆ and a nitrogen precursor,and wherein the exposing comprises ceasing the flow of WF₆.
 12. Themethod of claim 1 wherein the nitrogen-containing plasma is formed froma nitrogen-containing compound that does not comprise oxygen.
 13. Themethod of claim 1 wherein the nitrogen-containing plasma is formed fromat least one of N₂ and NH₃.
 14. The method of claim 1 wherein thetungsten and nitrogen are in the form of WN_(x), wherein x is from 0.05to 0.5.
 15. The method of claim 1 wherein the layer comprising tungstenand nitrogen is a first layer, and further comprising forming a secondlayer comprising tungsten and nitrogen over said first layer.
 16. Amethod of forming a mass comprising tungsten nitride, comprising:providing a substrate; depositing a first layer comprising tungstennitride over the substrate; ceasing the depositing of the first layerand exposing the first layer to a first nitrogen-containing plasma;after exposing the first layer to the first nitrogen-containing plasma,depositing a second layer comprising tungsten nitride; ceasing thedepositing of the second layer; and exposing the second layer to asecond nitrogen-containing plasma.
 17. The method of claim 16 whereinthe first layer comprises a first thickness of from about 30 Å to about2000 Å, and wherein the second layer comprises a second thickness offrom about 30 Å to about 2000 Å.
 18. The method of claim 16 wherein thefirst layer comprises a first thickness of from about 50 Å to about 500Å, and wherein the 3 second layer comprises a second thickness of fromabout 50 Å to about 500 Å.
 19. The method of claim 16 wherein thedepositing the first layer comprises the same conditions as thedepositing the second layer.
 20. The method of claim 16 wherein theexposing the first layer comprises the same conditions as the exposingthe second layer.
 21. The method of claim 16 wherein the substratecomprises a dielectric material having a “K” greater than or equal to10.
 22. The method of claim 21 wherein the dielectric material comprisesat least one of Ta₂O₅ and BST.
 23. The method of claim 21 wherein thesubstrate comprises silicon.
 24. The method of claim 21 wherein thesubstrate comprises silicon dioxide.
 25. The method of claim 21 whereinthe substrate comprises polysilicon.
 26. The method of claim 21 whereinthe substrate comprises a metal.
 27. The method of claim 21 wherein thesubstrate comprises copper.
 28. The method of claim 21 wherein the firstand second depositings comprise plasma-enhanced CVD utilizing WF₆ and anitrogen precursor.
 29. The method of claim 28 wherein the nitrogenprecursor comprises N₂.
 30. The method of claim 16 wherein the first andsecond depositings comprise plasma-enhanced CVD utilizing WF₆ and anitrogen precursor, and wherein the first and second exposings compriseceasing the flow of WF₆.
 31. The method of claim 16 wherein the firstand second nitrogen-containing plasmas are formed from anitrogen-containing compound that does not comprise oxygen.
 32. Themethod of claim 16 wherein the first and second nitrogen-containingplasmas are formed from at least one of N₂ and NH₃.
 33. A method offorming a capacitor, comprising: forming a first electrical node;forming a dielectric layer over the first electrical node; forming asecond electrical node separated from the first electrical node by thedielectric layer; and at least one of the first and second electricalnodes comprising tungsten and nitrogen, the forming said at least one ofthe nodes comprising; depositing a layer comprising tungsten andnitrogen; and in a separate step from the depositing, exposing the layercomprising tungsten and nitrogen to a nitrogen-containing plasma. 34.The method of claim 33 wherein the depositing comprises plasma-enhancedCVD utilizing WF₆ and a nitrogen precursor, and wherein the exposingcomprises ceasing the flow of WF₆.
 35. The method of claim 33 whereinthe nitrogen-containing plasma is formed from a nitrogen-containingcompound that does not comprise oxygen.
 36. The method of claim 33wherein the nitrogen-containing plasma is formed from at least one of N₂and NH₃.
 37. A method of forming a capacitor, comprising: forming afirst electrical node; forming a dielectric layer over the firstelectrical node; forming a second electrical node separated from thefirst electrical node by the dielectric layer; and providing a materialcomprising tungsten and nitrogen between the dielectric layer and atleast one of the electrical nodes, the providing comprising; depositinga layer comprising tungsten and nitrogen; and in a separate step fromthe depositing, exposing the layer comprising tungsten and nitrogen to anitrogen-containing plasma.
 38. The method of claim 37 wherein thematerial comprising tungsten and nitrogen is formed between thedielectric layer and only one of the electrical nodes.
 39. The method ofclaim 37 wherein the material comprising tungsten and nitrogen is formedbetween the dielectric layer and both of the electrical nodes.
 40. Themethod of claim 37 wherein the dielectric layer comprises a dielectricmaterial having a “K” greater than or equal to
 10. 41. The method ofclaim 40 wherein the dielectric material comprises at least one of Ta₂O₅and BST.
 42. The method of claim 37 wherein the depositing comprisesplasma-enhanced CVD utilizing WF₆ and a nitrogen precursor.
 43. Themethod of claim 42 wherein the nitrogen precursor comprises N₂.
 44. Themethod of claim 37 wherein the depositing comprises plasma-enhanced CVDutilizing WF₆ and a nitrogen precursor, and wherein the exposingcomprises ceasing the flow of WF₆.
 45. The method of claim 37 whereinthe nitrogen-containing is plasma is formed from a nitrogen-containingcompound that does not comprise oxygen.
 46. The method of claim 37wherein the nitrogen-containing plasma is formed from at least one of N₂and NH₅.
 47. The method of claim 37 wherein the tungsten and nitrogenare in the form of WN_(x), wherein x is from 0.05 to 0.5.
 48. The methodof claim 37 wherein the layer comprising tungsten and nitrogen is afirst layer, and further comprising forming a second layer comprisingtungsten and nitrogen over said first layer.